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| NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial-base complementary power transistors in a TO-220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: Collector-Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W Max Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO IEBO Test Conditions IE = 0, VCB = 100V IE = 0, VCB = 100V, TC = +150C Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IB = 0, VCE = 50V IC = 0, VEB = 5V Min - - - - 100 - - Typ - - - - - - - Max 500 5 1 1 - 1 3 Unit A mA mA mA V V V VCEO(sus) IB = 0, IC = 100mA, Note 1 VCE(sat) IC = 5A, IB = 0.5A, Note 1 IC = 10A, IB = 2.5A, Note 1 Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Symbol VBE(sat) VBE hFE Test Conditions IC = 10A, IB = 2.5A, Note 1 IC = 5A, VCE = 4V, Note 1 IC = 0.5A, VCE = 4V, Note 1 IC = 5A, VCE = 4V, Note 1 IC = 10A, VCE = 4V, Note 1 Transistion Frequency fT IC = 0.5A, VCE = 4V Min - - 40 15 5 3 Typ - - - - - - Max 2.5 1.5 250 150 - - MHz Unit V V Note 1. Pulsed; Pulse Duration = 300s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
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